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| ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. B PACKAGE STYLE .250 2L FLG A OD C E .060 x 45 CHAMFER FEATURES: * PG = 9.5 dB min. at 7.0 W/2300 MHz * Hermetic Microstrip Package * OmnigoldTM Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O O B C D E F .255 / 6.48 .132 / 3.35 1.2 A 26 V 21.4 W @ TC 50 C O O O .117 / 2.97 G H I J K L M .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 -65 C to +200 C -65 C to +200 C 7.0 C/W O N P ORDER CODE: ASI10536 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob PG C TC = 25 C O NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V VCC = 22 V POUT = 7.0 W IC = 500 mA f = 1.0 MHz f = 2.3 GHz RBE = 10 MINIMUM TYPICAL MAXIMUM 44 44 3.5 0.5 30 300 8.5 9.5 33 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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